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JOURNALS // Fizika i Tekhnika Poluprovodnikov // Archive

Fizika i Tekhnika Poluprovodnikov, 2015 Volume 49, Issue 8, Pages 1108–1114 (Mi phts7367)

This article is cited in 4 papers

Semiconductor physics

Optical-cell model based on the lasing competition of mode structures with different Q-factors in high-power semiconductor lasers

A. A. Podoskin, I. S. Shashkin, S. O. Slipchenko, N. A. Pikhtin, I. S. Tarasov

Ioffe Institute, St. Petersburg

Abstract: A model describing the operation of a completely optical cell, based on the competition of lasing of Fabry–Perot cavity modes and the high-Q closed mode in high-power semiconductor lasers is proposed. Based on rate equations, the conditions of lasing switching between Fabry–Perot modes for ground and excited lasing levels and the closed mode are considered in the case of increasing internal optical loss under conditions of high current pump levels. The optical-cell operation conditions in the mode of a high-power laser radiation switch (reversible mode-structure switching) and in the mode of a memory cell with bistable irreversible lasing switching between mode structures with various Q-factors are considered.

Received: 29.12.2014
Accepted: 30.12.2014


 English version:
Semiconductors, 2015, 49:8, 1083–1089

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