A. M. Nadtochiy, S. A. Mintairov, N. A. Kalyuzhnyy, S. S. Ruvimov, Yu. M. Shernyakov, A. S. Payusov, M. V. Maksimov, A. E. Zhukov, “Effect of the bimodality of a QD array on the optical properties and threshold characteristics of QD lasers”, Fizika i Tekhnika Poluprovodnikov, 2015, Volume 49, Issue 8,Pages <nobr>1115

This article is cited in 11 papers

Semiconductor physics

Effect of the bimodality of a QD array on the optical properties and threshold characteristics of QD lasers

A. M. Nadtochiy^abc, S. A. Mintairov^c, N. A. Kalyuzhnyy^c, S. S. Ruvimov^d, Yu. M. Shernyakov^c, A. S. Payusov^ac, M. V. Maksimov^abc, A. E. Zhukov^ab

^a St. Petersburg Academic University — Nanotechnology Research and Education Centre of the Russian Academy of Sciences (the Academic University)
^b "Solar Dots" OOO, St. Petersburg, 194021, Russia
^c Ioffe Institute, St. Petersburg
^d University of Notre Dame, Notre Dame, Indiana 46556 USA

Abstract: Heterostructures with InGaAs quantum dots (QDs) are synthesized on vicinal GaAs (001) substrates. The photoluminescence (PL) spectra and threshold characteristics of edge-emitting QD lasers are studied in the temperature range 10–400 K. The structural properties of QDs are examined by transmission electron microscopy. Analysis of the PL spectra demonstrates the bimodality of the QD array, which leads to an unusual temperature behavior of the PL spectra and threshold current density. A model of the population of a bimodal QD array by carriers, describing the observed phenomena, is considered.

Received: 29.01.2015
Accepted: 10.02.2015