A. S. Vlasov, A. M. Mintairov, N. A. Kalyuzhnyy, S. A. Mintairov, R. A. Salii, A. I. Denisyuk, R. A. Babunts, “Site-Controlled Growth of Single InP QDs”, Fizika i Tekhnika Poluprovodnikov, 2015, Volume 49, Issue 8,Pages <nobr>1120

Manufacturing, processing, testing of materials and structures

Site-Controlled Growth of Single InP QDs

A. S. Vlasov^a, A. M. Mintairov^ab, N. A. Kalyuzhnyy^a, S. A. Mintairov^a, R. A. Salii^a, A. I. Denisyuk^c, R. A. Babunts^a

^a Ioffe Institute, St. Petersburg
^b Notre Dame University, Notre Dame, IN, 46556, US
^c St. Petersburg National Research University of Information Technologies, Mechanics and Optics

Abstract: The MOVPE growth of InP/GaInP quantum dots (QDs) on GaAs substrate “defects” formed by a focused beam of Ga$^+$ ions is studied. It is shown that ordered arrays of QDs with a density of 0.25 ($\mu$m)$^{-2}$ can be obtained in the InP/GaInP system. It is demonstrated that effective luminescence can be obtained by using two QD sheets separated by a GaAs/GaInP buffer layer.

Received: 18.11.2014
Accepted: 27.11.2014