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Fizika i Tekhnika Poluprovodnikov, 2015 Volume 49, Issue 9, Pages 1184–1188 (Mi phts7379)

This article is cited in 6 papers

Electronic properties of semiconductors

Specific features of the optical and photoelectric properties of nanocrystalline indium oxide

E. A. Forshab, P. A. Forshac, P. K. Kashkarovabcd

a National Research Centre "Kurchatov Institute", Moscow
b Moscow Institute of Physics and Technology (National Research University), Dolgoprudny, Moscow Region
c Lomonosov Moscow State University, Faculty of Physics
d St. Petersburg State University, Faculty of Physics

Abstract: The spectral dependences of the absorption coefficient and steady-state photoconductivity and the relaxation of photoconductivity (after illumination switch off) in nanocrystalline indium oxide (In$_2$O$_3$) films synthesized by the sol–gel method are investigated. The mean nanocrystal size varies from 7–8 to 39–41 nm, depending on the sample-preparation conditions. The optical band gap of nanocrystalline In$_2$O$_3$ is determined as a result of combined analysis of the optical absorption spectra and the spectral dependence of the photoconductivity. The optical band gap in nanocrystalline In$_2$O$_3$ is found to be much narrower than the optical band gap in In$_2$O$_3$ single crystals. The photoconductivity decay kinetics in nanocrystalline In$_2$O$_3$ in air, vacuum, and argon at room temperature are studied. A model explaining the observed photoconductivity decay is proposed.

Received: 17.02.2015
Accepted: 25.02.2015


 English version:
Semiconductors, 2015, 49:9, 1149–1153

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