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Fizika i Tekhnika Poluprovodnikov, 2015 Volume 49, Issue 10, Pages 1297–1303 (Mi phts7398)

This article is cited in 9 papers

Non-electronic properties of semiconductors (atomic structure, diffusion)

Structural properties of ZnO:Al films produced by the sol–gel technique

E. P. Zaretskayaa, V. F. Gremenoka, A. V. Semchenkob, V. V. Sidskyb, R. L. Juškėnasc

a Scientific-Practical Materials Research Centre of NAS of Belarus
b Gomel State University named after Francisk Skorina
c State Research Institute Center for Physical Sciences and Technology, Vilnius, LT-01108, Lithuania

Abstract: ZnO:Al films are produced by sol–gel deposition at temperatures of 350–550$^\circ$C, using different types of reagents. Atomic-force microscopy, X-ray diffraction analysis, Raman spectroscopy, and optical transmittance measurements are used to study the dependence of the structural, morphological, and optical properties of the ZnO:Al coatings on the conditions of deposition. The optical conditions for the production of ZnO:Al layers with preferred orientation in the [001] direction and distinguished by small surface roughness are established. The layers produced in the study possess optical transmittance at a level of up to 95% in a wide spectral range and can be used in optoelectronic devices.

Received: 12.01.2015
Accepted: 05.02.2015


 English version:
Semiconductors, 2015, 49:10, 1253–1258

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