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Fizika i Tekhnika Poluprovodnikov, 2015 Volume 49, Issue 10, Pages 1314–1319 (Mi phts7400)

This article is cited in 4 papers

Electronic properties of semiconductors

Crossover between transport mechanisms in the region of the transition from sublinearity to superlinearity of the AC-conductivity frequency dependence for disordered semiconductors

M. A. Ormont

Lomonosov Moscow State University, Faculty of Physics

Abstract: The transition of the frequency dependence of AC conductivity of disordered semiconductors from sublinear to superlinear behavior with an increase in frequency, which is observed for many disordered systems, is investigated. It is shown that the standard approach to calculating the superlinearity of the frequency dependence of the AC hopping conductivity in the form $\operatorname{Re}\sigma(\omega)\sim\frac{\omega}{\ln(\omega_{\mathrm{c,ph}}/\omega)}$ ($\omega_{\mathrm{c,ph}}$ is the characteristic frequency), based on the single-particle density of states with a Coulomb gap, generally cannot be used to calculate high-frequency conductivity. The superlinearity of the experimentally observed frequency dependences of the conductivity $\operatorname{Re}{\sigma(\omega)}$ in the crossover region indicates that the optimal hop length is frequency-independent and that the resonance mechanism of conductivity plays a key role. The resonance mechanism causes abnormally large measured values $\cot(\gamma)=\operatorname{Im}\sigma/\operatorname{Re}\sigma$ ($\gamma$ is the dissipation factor) in the crossover region.

Received: 03.03.2015
Accepted: 09.03.2015


 English version:
Semiconductors, 2015, 49:10, 1270–1275

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