T. S. Kamilov, L. L. Aksenova, B. Z. Sharipov, I. V. Ernst, “Investigation of current instabilities in Мn$_4$Si$_7$–Si$\langle$Mn$\rangle$–Мn$_4$Si$_7$ and Мn$_4$Si$_7$–Si$\langle$Mn$\rangle$–М heterojunctions”, Fizika i Tekhnika Poluprovodnikov, 2015, Volume 49, Issue 10,Pages 1325

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Electronic properties of semiconductors

Investigation of current instabilities in Мn$_4$Si$_7$–Si$\langle$Mn$\rangle$–Мn$_4$Si$_7$ and Мn$_4$Si$_7$–Si$\langle$Mn$\rangle$–М heterojunctions

T. S. Kamilov^a, L. L. Aksenova^b, B. Z. Sharipov^a, I. V. Ernst^a

^a Tashkent State Technical University named after Islam Karimov
^b Institute of Cristallography Russian Academy of Sciences, Moscow

Abstract: The features of current instabilities in Мn$_4$Si$_7$–Si$\langle$Mn$\rangle$–Мn$_4$Si$_7$ and Мn$_4$Si$_7$–Si$\langle$Mn$\rangle$–М heterojunctions are investigated at low temperatures and upon “intrinsic” illumination with $h\nu>$ 1.12 eV. It is shown that low-frequency self-oscillations related to intensification and quenching of the photoconductivity can be obtained at high applied voltages.

Received: 24.02.2015
Accepted: 12.03.2015