Anomalously long lifetime of holes in silicon with nanoclusters of manganese atoms

It is shown that it is possible to considerably increase the lifetime of holes ($\tau\approx$ 10$^3$ s) in silicon with multicharged nanoclusters of manganese atoms. It is established that the long lifetime of holes ($\tau\approx$ 10$^0$–10$^3$ s) is practically retained right up to $T$ = 250 K. Such materials can be used in the development of more effective photoelements and photodetectors of infrared (IR) radiation.