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Fizika i Tekhnika Poluprovodnikov, 2015 Volume 49, Issue 11, Pages 1546–1552 (Mi phts7443)

This article is cited in 6 papers

Semiconductor physics

Spatial hole burning and spectral stability of a quantum-dot laser

A. V. Savel'evab, V. V. Koreneva, M. V. Maksimovac, A. E. Zhukovab

a St. Petersburg Academic University — Nanotechnology Research and Education Centre of the Russian Academy of Sciences (the Academic University)
b Peter the Great St. Petersburg Polytechnic University
c Ioffe Institute, St. Petersburg

Abstract: The inhomogeneous intensity distribution of the optical model along the axis of a semiconductor quantum-dot laser results in spatial hole burning. The influence of this phenomenon on the stability of the multifrequency emission spectrum is studied when the optical transition of the quantum dots is characterized by considerable homogeneous broadening. The results of two models–in which inhomogeneous broadening is disregarded and taken into account–regarding the stability of the radiation spectrum under the influence of slight variation of the spectral loss dependence in the resonator are compared. Inhomogeneous distribution of the charge carriers (spatial hole burning) is found to be a critical factor in determining the form and stability of the spectrum.

Received: 06.04.2015
Accepted: 20.04.2015


 English version:
Semiconductors, 2015, 49:11, 1499–1505

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