A. S. Puzanov, S. V. Obolensky, V. A. Kozlov, E. V. Volkova, D. G. Pavel'ev, “High-frequency detection of the formation and stabilization of a radiation-induced defect cluster in semiconductor structures”, Fizika i Tekhnika Poluprovodnikov, 2015, Volume 49, Issue 12,Pages <nobr>1585

This article is cited in 4 papers

XIX Symposium "Nanophysics and Nanoelectronics", Nizhny Novgorod, March 10-14, 2015

High-frequency detection of the formation and stabilization of a radiation-induced defect cluster in semiconductor structures

A. S. Puzanov^a, S. V. Obolensky^a, V. A. Kozlov^ab, E. V. Volkova^a, D. G. Pavel'ev^a

^a Lobachevsky State University of Nizhny Novgorod
^b Institute for Physics of Microstructures, Russian Academy of Sciences, Nizhnii Novgorod

Abstract: The processes of the formation and stabilization of a radiation-induced defect cluster upon the arrival of a fast neutron to the space-charge region of a semiconductor diode are analyzed. The current pulse formed by secondary electrons is calculated and the spectrum of the signal generated by the diode (detector) under the action of an instantaneous neutron flux of the fission spectrum is determined. The possibility of experimental detection of the picosecond radiation-induced transition processes is discussed.

Received: 22.04.2015
Accepted: 15.05.2015