Yu. G. Arapov, S. V. Gudina, V. N. Neverov, S. M. Podgornykh, M. R. Popov, G. I. Kharus, N. G. Shelushinina, M. V. Yakunin, N. N. Mikhailov, S. A. Dvoretskii, “Temperature scaling in the quantum-Hall-effect regime in a HgTe quantum well with an inverted energy spectrum”, Fizika i Tekhnika Poluprovodnikov, 2015, Volume 49, Issue 12,Pages <nobr>1593

This article is cited in 10 papers

XIX Symposium "Nanophysics and Nanoelectronics", Nizhny Novgorod, March 10-14, 2015

Temperature scaling in the quantum-Hall-effect regime in a HgTe quantum well with an inverted energy spectrum

Yu. G. Arapov^a, S. V. Gudina^a, V. N. Neverov^a, S. M. Podgornykh^ab, M. R. Popov^a, G. I. Kharus^a, N. G. Shelushinina^a, M. V. Yakunin^ab, N. N. Mikhailov^cd, S. A. Dvoretskii^ce

^a Institute of Metal Physics, Ural Branch of the Russian Academy of Sciences, Ekaterinburg
^b Ural Federal University named after the First President of Russia B. N. Yeltsin, Ekaterinburg
^c Rzhanov Institute of Semiconductor Physics, Siberian Branch of Russian Academy of Sciences, Novosibirsk
^d Novosibirsk State University
^e Tomsk State University

Abstract: The longitudinal and Hall magnetoresistances of HgTe/HgCdTe heterostructures with an inverted energy spectrum (the HgTe quantum well width is $d$ = 20.3 nm) are measured in the quantum-Hall-effect regime at $T$ = 2–50 K in magnetic fields up to $B$ = 9 T. Analysis of the temperature dependences of conductivity in the transition region between the first and second plateaus of the quantum Hall effect shows the feasibility of the scaling regime for a plateau–plateau quantum phase transition in 2D-structures on the basis of mercury telluride.

Received: 22.04.2015
Accepted: 12.05.2015