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Fizika i Tekhnika Poluprovodnikov, 2015 Volume 49, Issue 12, Pages 1619–1622 (Mi phts7455)

This article is cited in 1 paper

XIX Symposium "Nanophysics and Nanoelectronics", Nizhny Novgorod, March 10-14, 2015

Optimization of InGaP/GaAs/InGaAs heterolasers with tunnel-coupled waveguides

I. V. Samartseva, V. Ya. Aleshkinb, N. V. Dikarevaa, A. A. Dubinovbc, B. N. Zvonkova, D. A. Kolpakova, S. M. Nekorkina

a Scientific-Research Physicotechnical Institute at the Nizhnii Novgorod State University, Nizhnii Novgorod
b Institute for Physics of Microstructures, Russian Academy of Sciences, Nizhnii Novgorod
c Lobachevsky State University of Nizhny Novgorod

Abstract: The optimization of InGaP/GaAs/InGaAs laser structures with tunnel-coupled waveguides with the aim of reducing the directivity diagram is presented. The width of the directivity diagram in the plane normal to the $p$$n$ junction is reduced to 28$^\circ$ in the lasers produced.

Received: 22.04.2015
Accepted: 12.05.2015


 English version:
Semiconductors, 2015, 49:12, 1571–1574

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