N. S. Volkova, A. P. Gorshkov, A. V. Zdoroveyshchev, L. A. Istomin, S. B. Levichev, “Effect of the deposition of cobalt on the optoelectronic properties of quantum-confined In(Ga)As/GaAs heteronanostructures”, Fizika i Tekhnika Poluprovodnikov, 2015, Volume 49, Issue 12,Pages <nobr>1640

This article is cited in 3 papers

XIX Symposium "Nanophysics and Nanoelectronics", Nizhny Novgorod, March 10-14, 2015

Effect of the deposition of cobalt on the optoelectronic properties of quantum-confined In(Ga)As/GaAs heteronanostructures

N. S. Volkova^ab, A. P. Gorshkov^c, A. V. Zdoroveyshchev^a, L. A. Istomin^b, S. B. Levichev^b

^a Scientific-Research Physicotechnical Institute at the Nizhnii Novgorod State University, Nizhnii Novgorod
^b Chemistry Research Institute of N. I. Lobachevsky, State University of Nizhny Novgorod
^c Lobachevsky State University of Nizhny Novgorod

Abstract: The systematic features of the inf luence of defect formation during the deposition of a cobalt contact on the optoelectronic characteristics of structures containing InAs/GaAs quantum dots and In$_x$Ga$_{1-x}$As/GaAs quantum wells are studied. From analysis of the temperature dependences of the photosensitivity of the InAs/GaAs quantum-dot structures, the values of the resultant recombination lifetime of photoexcited charge carriers in quantum dots at different conditions of Co deposition and at different structural parameters are determined.

Received: 22.04.2015
Accepted: 12.05.2015