D. V. Kozlov, V. V. Rumyantsev, S. V. Morozov, A. M. Kadykov, V. S. Varavin, N. N. Mikhailov, S. A. Dvoretskii, V. I. Gavrilenko, F. Teppe, “Impurity-induced photoconductivity of narrow-gap Cadmium–Mercury–Telluride structures”, Fizika i Tekhnika Poluprovodnikov, 2015, Volume 49, Issue 12,Pages <nobr>1654

This article is cited in 6 papers

XIX Symposium "Nanophysics and Nanoelectronics", Nizhny Novgorod, March 10-14, 2015

Impurity-induced photoconductivity of narrow-gap Cadmium–Mercury–Telluride structures

D. V. Kozlov^ab, V. V. Rumyantsev^ab, S. V. Morozov^ab, A. M. Kadykov^ac, V. S. Varavin^d, N. N. Mikhailov^de, S. A. Dvoretskii^de, V. I. Gavrilenko^ab, F. Teppe^c

^a Institute for Physics of Microstructures, Russian Academy of Sciences, Nizhnii Novgorod
^b Lobachevsky State University of Nizhny Novgorod
^c Laboratoire Charles Coulomb (L2C), Universite Montpellier II, Montpellier, France
^d Rzhanov Institute of Semiconductor Physics, Siberian Branch of Russian Academy of Sciences, Novosibirsk
^e Novosibirsk State University

Abstract: The photoconductivity (PC) spectra of CdHgTe (MCT) solid solutions with a Cd fraction of 17 and 19% are measured. A simple model for calculating the states of doubly charged acceptors in MCT solid solutions, which makes it possible to describe satisfactorily the observed photoconductivity spectra, is proposed. The found lines in the photoconductivity spectra of narrow-gap MCT structures are associated with transitions between the states of both charged and neutral acceptor centers.

Received: 29.04.2015
Accepted: 12.05.2015