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Fizika i Tekhnika Poluprovodnikov, 2015 Volume 49, Issue 12, Pages 1665–1671 (Mi phts7464)

XIX Symposium "Nanophysics and Nanoelectronics", Nizhny Novgorod, March 10-14, 2015

Cyclotron resonance in InAs/AlSb quantum wells in magnetic fields up to 45 T

K. E. Spirinab, S. S. Krishtopenkoab, Yu. G. Sadof'evc, O. Drachenkode, M. Helme, F. Teppef, W. Knapf, V. I. Gavrilenkoab

a Institute for Physics of Microstructures, Russian Academy of Sciences, Nizhnii Novgorod
b Lobachevsky State University of Nizhny Novgorod
c P. N. Lebedev Physical Institute, Russian Academy of Sciences, Moscow
d Laboratoire National des Champs Magn’etiques Intenses, UPR 3228, 31400 France
e Dresden High Magnetic Field Laboratory and Institute of Ion-Beam Physics and Materials Research, P.O.Box 510119
f Laboratoire Charles Coulomb UMR CNRS 5221 (L2C) GIS-TERALAB Universite Montpellier II, 34095 Montpellier, France

Abstract: Electron cyclotron resonance in InAs/AlSb heterostructures with quantum wells of various widths in pulsed magnetic fields up to 45 T are investigated. Our experimental cyclotron energies are in satisfactory agreement with the results of theoretical calculations performed using the eight-band $\mathbf{kp}$ Hamiltonian. The shift of the cyclotron resonance (CR) line, which corresponds to the transition from the lowest Landau level to the low magnetic-field region, is found upon varying the electron concentration due to the negative persistent photoconductivity effect. It is shown that the observed shift of the CR lines is associated with the finite width of the density of states at the Landau levels.

Received: 22.04.2015
Accepted: 12.05.2015


 English version:
Semiconductors, 2015, 49:12, 1616–1622

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