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Fizika i Tekhnika Poluprovodnikov, 2015 Volume 49, Issue 12, Pages 1683–1688 (Mi phts7467)

This article is cited in 3 papers

Non-electronic properties of semiconductors (atomic structure, diffusion)

On estimations of the melting temperature of graphene-like compounds

S. Yu. Davydovab

a Ioffe Institute, St. Petersburg
b St. Petersburg National Research University of Information Technologies, Mechanics and Optics

Abstract: Three approaches to the problem of determining the melting temperature considered as the temperature of thermal instability of a two-dimensional hexagonal structure are discussed. These approaches are (i) Naya–Iziri–Ishii’s approximation, (ii) the Lindemann criterion, and (iii) the Born criterion. The Harrison method of bonding orbitals is used for numerical estimations. Graphene, silicene, germanene, and 12 IV–IV and III–V compounds are considered. It is shown that the Lindemann and Born criteria give close and more real results in comparison to Naya–Iziri–Ishii’s approximation. To obtain rough estimates of the “bulk” and “surface” melting temperatures, the expressions $T_b\sim 10^4$ K/a$^2$ and $T_s\sim 2T_b/3$, where the spacing between the nearest neighbors a is given in $\mathring{\mathrm{A}}$, are proposed.

Received: 16.04.2015
Accepted: 10.04.2015


 English version:
Semiconductors, 2015, 49:12, 1634–1639

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