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Fizika i Tekhnika Poluprovodnikov, 2015 Volume 49, Issue 12, Pages 1704–1709 (Mi phts7471)

This article is cited in 5 papers

Surface, interfaces, thin films

Conductivity over localized states of the system of (TlInSe$_2$)$_{1-x}$(TlGaTe$_2$)$_x$ solid solutions

R. M. Sardarlya, O. A. Samedova, N. A. Aliyevab, E. K. Huseynovab, A. P. Abdullayeva, F. T. Salmanova, E. M. Kerimovab

a Institute of radiation problems, ANAS
b Institute of Physics Azerbaijan Academy of Sciences

Abstract: The temperature dependences of electrical conductivity over localized states in the solubility region of mixed crystals of compositions (TlInSe$_2$)$_{1-x}$(TlGaTe$_2$)$_x$ at $x$ = 0, 0.1 0.2, 0.8, 0.9, and 1 are studied. It is established that hopping conductivity with a variable hop length over localized states near the Fermi level occurs in this system. The conductivity activation energy is determined; and the density of states in the vicinity of the Fermi level, their dispersion, localization radius, and average carrier hop distance for all compositions are estimated; and the concentration dependences of the calculated parameters are plotted.

Received: 27.02.2014
Accepted: 03.04.2015


 English version:
Semiconductors, 2015, 49:12, 1655–1660

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