On the application of methods of positron annihilation spectroscopy for studying radiation-stimulated processes in chalcogenide glassy semiconductors

Unirradiated and $\gamma$-irradiated (average energy $E$ = 1.25 MeV and dose $\Phi$ = 2.41 MGy) chalcogenide glassy semiconductors (CGSs) As$_2$S$_3$ и Ge$_{15.8}$As$_{21}$S$_{63.2}$ are studied by positron annihilation lifetime spectroscopy (PALS) and Doppler broadening of the 0.511-MeV annihilation line (DBAL). Two $^{22}$Na positron sources with activities of 0.6 and 2.0 MBq and Kapton film thicknesses of 8.0 and 25.0 $\mu$m, respectively, are used. It is shown that radiation-induced changes in the PALS parameters of the CGS types under study are within measurement errors. The DBAL method appeared more efficient and accurate for studying radiation-stimulated processes in CGSs.