V. V. Lundin, A. E. Nikolaev, A. V. Sakharov, S. O. Usov, E. E. Zavarin, P. N. Brunkov, M. A. Yagovkina, N. A. Cherkashin, A. F. Tsatsul'nikov, “Dependence of the efficiency of III–N blue LEDs on the structural perfection of GaN epitaxial buffer layers”, Fizika i Tekhnika Poluprovodnikov, 2014, Volume 48, Issue 1,Pages <nobr>55

This article is cited in 9 papers

Semiconductor physics

Dependence of the efficiency of III–N blue LEDs on the structural perfection of GaN epitaxial buffer layers

V. V. Lundin^a, A. E. Nikolaev^ab, A. V. Sakharov^ab, S. O. Usov^a, E. E. Zavarin^ab, P. N. Brunkov^b, M. A. Yagovkina^b, N. A. Cherkashin^c, A. F. Tsatsul'nikov^ab

^a Submicron Heterostructures for Microelectronics Research and Engineering Center, Russian Academy of Sciences, St. Petersburg
^b Ioffe Institute, St. Petersburg
^c Center for Material Elaboration & Structural Studies (CEMES) of the National Center for Scientific Research (CNRS), 31055 Toulouse, France

Abstract: III–N blue LED structures with active regions based on InGaN nanoislands are studied. The structures are grown by metalorganic vapor-phase epitaxy (MOVPE) on GaN layers deposited by various methods for the initial formation of an epitaxial layer. It is shown that, due to strong carrier localization in narrow-gap InGaN nanoislands, the electroluminescence efficiency is independent of the crystal perfection of the material.

Received: 23.05.2013
Accepted: 04.06.2013