RUS  ENG
Full version
JOURNALS // Fizika i Tekhnika Poluprovodnikov // Archive

Fizika i Tekhnika Poluprovodnikov, 2014 Volume 48, Issue 2, Pages 207–211 (Mi phts7511)

This article is cited in 6 papers

Spectroscopy, interaction with radiation

Photoluminescence of CdHgTe solid solutions subjected to low-energy ion treatment

I. I. Izhnina, A. I. Izhnina, K. J. Mynbaevbc, N. L. Bazhenovb, E. I. Fitsycha, M. V. Yakushevd, N. N. Mikhailovd, V. S. Varavind, S. A. Dvoretskiid

a Karat Scientific and Production Enterprise, L'vov
b Ioffe Institute, St. Petersburg
c Saint Petersburg Electrotechnical University "LETI"
d Rzhanov Institute of Semiconductor Physics, Siberian Branch of Russian Academy of Sciences, Novosibirsk

Abstract: The photoluminescence (PL) of CdHgTe solid solutions subjected to low-energy ion treatment is studied. A blue shift of the peaks in the PL spectra is observed immediately after ion treatment, which is attributed to the formation of a high concentration of donor defects and to the Burstein–Moss effect. The change in the shape of the PL spectra and, in particular, the disappearance of lines associated with transitions to acceptor states indicate that these defects are formed by the interaction of interstitial mercury atoms introduced into the sample during the course of treatment with impurity atoms. As the treatment is terminated, the electron concentration decreases due to the disintegration of defects and the blue shift disappears, but the shape of the spectra remains unchanged. This behavior of the PL spectra can be used for diagnostics of the defect-impurity structure of CdHgTe.

Received: 22.04.2013
Accepted: 23.05.2013


 English version:
Semiconductors, 2014, 48:2, 195–198

Bibliographic databases:


© Steklov Math. Inst. of RAS, 2025