Synthesis of thin $p$-type rutile films

The structure and electrical and optical properties of heterostructures formed on the surface of single-crystal silicon wafers as a result of the heat treatment and pulsed photon treatment of Ti films in oxygen, air, and nitrogen are investigated. It is shown that a TiO$_2$/Ti$_5$Si$_3$/$p$-Si heterostructure is formed upon heat treatment in air, whereas a TiO$_2$/TiSi$_2$/$p$-Si heterostructure is formed upon photon treatment. It is established that rutile films with pronounced $n$-type conductivity are formed as a result of the heat treatment of Ni-doped Ti films in oxygen. Rutile films with $p$-type conductivity are formed upon the thermal annealing of Ti films in air with subsequent photon treatment in nitrogen.