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JOURNALS // Fizika i Tekhnika Poluprovodnikov // Archive

Fizika i Tekhnika Poluprovodnikov, 2014 Volume 48, Issue 2, Pages 272–277 (Mi phts7524)

This article is cited in 3 papers

Manufacturing, processing, testing of materials and structures

Determination of the composition of multicomponent chalcogenide semiconductors by X-ray fluorescence analysis

G. A. Bordovskiia, A. V. Marchenkoa, A. V. Nikolaevaa, P. P. Seregina, E. I. Terukovbc

a Herzen State Pedagogical University of Russia, St. Petersburg
b Ioffe Institute, St. Petersburg
c Saint Petersburg Electrotechnical University "LETI"

Abstract: The composition of As$_x$(Ge$_y$Se$_{1-y}$)$_{1-x}$ glassy alloys is quantitatively determined by measuring the X-ray fluorescence spectrum of a Ge$_{0.2}$As$_{0.4}$Se$_{0.4}$ reference alloy. The atomic fractions of arsenic, germanium, and selenium are calculated from the X-ray fluorescence spectra and the $x_{\mathrm{RFA}}=f(x)$ and $y_{\mathrm{RGA}}= f(y)$ dependences are plotted. These dependences make it possible to determine the composition of the glasses with an accuracy of $\pm$ 0.0005 for $x$ and $y$. This procedure is effective for finding the concentration of the tin impurity in Pb$_{1-x}$Sn$_x$Se crystalline solid solutions. However, it is impossible to determine the content of tellurium in Te$_x$(As$_y$Se$_{1-y}$)$_{1-x}$ glassy alloys because the alloy components have significantly different X-ray fluorescence characteristics.

Received: 20.03.2013
Accepted: 01.04.2013


 English version:
Semiconductors, 2014, 48:2, 257–262

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