Influence of cation-vacancy imperfection on the electrical and photoelectric properties of the Cu$_{1-x}$Zn$_x$InS$_2$ alloy

The growth technology of single crystals of Cu$_{1-x}$Zn$_x$InS$_2$ alloys ($x$ = 0 – 12) of $n$-type conductivity is developed. The formation mechanism of the alloy is investigated by X-ray structural analysis. It is shown that the single crystals have chalcopyrite structure, and the unit-cell parameters depend on the alloy composition. The temperature dependence of the electrical conductivity in the temperature range $T$ = 27–300 K and the spectral distribution of the photoconductivity at $T\approx$ 30 K are investigated. Induced photoconductivity is found for CuInS$_2$–ZnIn$_2$S$_4$ with a content of $\sim$ 8 and $\sim$ 12 mol% ZnIn$_2$S$_4$ and thermally stimulated currents are investigated.