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Fizika i Tekhnika Poluprovodnikov, 2014 Volume 48, Issue 4, Pages 442–447 (Mi phts7554)

This article is cited in 5 papers

Electronic properties of semiconductors

On the polarization caused by bulk charges and the ionic conductivity in TlInSe$_2$ crystals

R. M. Sardarlya, O. A. Samedova, N. A. Aliyevaa, A. P. Abdullayeva, E. K. Huseynovb, I. S. Hasanovb, F. T. Salmanova

a Institute of radiation problems, ANAS
b Institute of Physics Azerbaijan Academy of Sciences

Abstract: TlInSe$_2$ crystals are investigated in dc and ac electric fields in the temperature range of 100–400 K. A decrease in the electrical conductivity $\sigma$ with time in a dc field is revealed. The complex-impedance spectra $Z^*(f)$ are measured in the frequency range of 10–10$^6$ Hz. Diagrams in the $(Z''-Z')$ complex plane are analyzed using the method of equivalent circuits. It is shown that the electrical properties of TlInSe$_2$ crystals in the investigated ranges of temperatures and frequencies are determined by hopping conductivity and the accumulation of charge carriers near blocking platinum electrodes.

Received: 26.06.2013
Accepted: 05.07.2013


 English version:
Semiconductors, 2014, 48:4, 427–431

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