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Fizika i Tekhnika Poluprovodnikov, 2014 Volume 48, Issue 4, Pages 462–466 (Mi phts7558)

This article is cited in 10 papers

Spectroscopy, interaction with radiation

Nonlinear optical effect upon the irradiation of GaN with cluster ions

P. A. Karaseova, K. V. Karabeshkina, A. I. Titova, V. B. Shilovb, G. M. Ermolaevab, V. G. Maslovc, A. O. Orlovac

a Peter the Great St. Petersburg Polytechnic University
b S. I. Vavilov State Optical Institute,
c St. Petersburg National Research University of Information Technologies, Mechanics and Optics

Abstract: The effect of the irradiation of single-crystal GaN films with accelerated atomic (P) and molecular (PF$_4$) ions with an energy of 0.6 keV amu$^{-1}$ on the crystal structure and optical properties of the films is considered. It is shown that, compared to irradiation with atomic ions, irradiation with small clusters induces (i) more rapid accumulation of structural defects, (ii) more efficient suppression of the violet luminescence band, and (iii) shorter decay times of the intensity of this band.

Received: 17.07.2013
Accepted: 19.08.2013


 English version:
Semiconductors, 2014, 48:4, 446–450

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