Electrical properties of MOS diodes In/TiO$_2$/$p$-CdTe

In/TiO$_2$/$p$-CdTe MOS diodes, which have a rectification coefficient of $K$ = 6 $\times$ 10$^3$ at an external bias of 2 V, are fabricated for the first time by means of the inexpensive spray-pyrolysis method. It is established that tunnel-recombination processes in the MOS structures under investigation for forward and reverse voltages with the participation of levels at an energy depth of 0.25 eV are the dominant current-flow mechanism. The features of the voltage-capacitance characteristics of In/TiO$_2$/$p$-CdTe MOS diodes testify to a sharp decrease in the resistance of the TiO$_2$ high-resistance layer at forward bias, which is caused by the relation between the energy parameters of components of the MOS structure under investigation.