A. A. Shemukhin, Yu. V. Balakshin, V. S. Chernysh, S. A. Golubkov, N. N. Egorov, A. I. Sidorov, “Defect formation and recrystallization mechanisms in silicon-on-sapphire films under ion irradiation”, Fizika i Tekhnika Poluprovodnikov, 2014, Volume 48, Issue 4,Pages <nobr>535

This article is cited in 11 papers

Manufacturing, processing, testing of materials and structures

Defect formation and recrystallization mechanisms in silicon-on-sapphire films under ion irradiation

A. A. Shemukhin^a, Yu. V. Balakshin^ab, V. S. Chernysh^ab, S. A. Golubkov^c, N. N. Egorov^c, A. I. Sidorov^c

^a Lomonosov Moscow State University, Skobeltsyn Institute of Nuclear Physics
^b Lomonosov Moscow State University, Faculty of Physics
^c Research Institute of Materials Science and Technology, Zelenograd

Abstract: The effect of the parameters (energy, dose) of the irradiation of silicon-on-sapphire (SOS) structures with ions Si$^+$ ions on the quality of the silicon-film crystal structure after solid-phase epitaxial recrystallization and annealing is studied. It is shown that the most efficient mechanism of crystal-structure recovery is recrystallization from the silicon surface layer which is a seed.

Received: 04.06.2013
Accepted: 19.06.2013