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Fizika i Tekhnika Poluprovodnikov, 2014 Volume 48, Issue 5, Pages 705–709 (Mi phts7599)

This article is cited in 3 papers

Semiconductor physics

Analysis of the emission efficiency of powerful semiconductor lasers under closed-mode threshold lasing conditions

S. O. Slipchenko, A. A. Podoskin, I. S. Shashkin, V. V. Zolotarev, N. A. Pikhtin, I. S. Tarasov

Ioffe Institute, St. Petersburg

Abstract: A new model describing the decrease in the emission efficiency and optical output power of a semiconductor laser above the lasing threshold of the Fabry-Perot mode is suggested. The mechanism of deterioration of the output-power characteristics is described in the suggested model in terms of the achievement of closed-mode threshold conditions. Rate equations are used to analyze how the closed-mode threshold conditions are satisfied in semiconductor lasers.

Received: 15.10.2013
Accepted: 21.10.2013


 English version:
Semiconductors, 2014, 48:5, 686–690

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