RUS  ENG
Full version
JOURNALS // Fizika i Tekhnika Poluprovodnikov // Archive

Fizika i Tekhnika Poluprovodnikov, 2014 Volume 48, Issue 5, Pages 710–715 (Mi phts7600)

This article is cited in 1 paper

Semiconductor physics

Multi-wavelength integrated optical-laser emission modulator based on semiconductor heterostructures

S. O. Slipchenko, A. A. Podoskin, N. A. Pikhtin, V. V. Zolotarev, I. S. Shashkin, A. Yu. Leshko, A. V. Lyutetskiy, M. G. Rastegaeva, I. S. Tarasov, P. S. Kop'ev

Ioffe Institute, St. Petersburg

Abstract: Small-signal-controlled optical modulator structure capable of operation at several wavelengths is suggested. It is shown that the application of spectrally selective mirrors makes it possible to develop optically integrated cavities that provide lasing at prescribed discrete wavelengths and a control section that can vary the internal optical loss. The main relationships between the lasing-mode switching conditions and optical-modulator structure parameters are determined. Optical modulators for the 1060–1080 nm spectral range, with a distributed Bragg reflector as one of the mirrors, are developed and experimentally investigated. It is shown that small-signal control by a forward current can switch the lasing between optically integrated Fabry-Perot cavities at a 5–20 ns rate.

Received: 21.10.2013
Accepted: 01.11.2013


 English version:
Semiconductors, 2014, 48:5, 691–696

Bibliographic databases:


© Steklov Math. Inst. of RAS, 2025