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Fizika i Tekhnika Poluprovodnikov, 2014 Volume 48, Issue 5, Pages 716–718 (Mi phts7601)

This article is cited in 18 papers

Semiconductor physics

On the control efficiency of a high-power laser thyristor emitting in the 890–910 nm spectral range

S. O. Slipchenkoa, A. A. Podoskina, V. V. Vasil'evaa, N. A. Pikhtina, A. V. Rozhkova, A. V. Gorbatyuka, V. V. Zolotareva, D. A. Veselova, A. V. Zhabotinskya, A. A. Petukhova, I. S. Tarasova, T. A. Bagaevb, M. V. Zverkovb, V. P. Konyaevb, Yu. V. Kurnyavkob, M. A. Laduginb, A. V. Lobintsovb, A. A. Marmalyukb, A. A. Padalitsab, V. A. Simakovb

a Ioffe Institute, St. Petersburg
b Polyus Research and Development Institute named after M. F. Stel'makh, Moscow

Abstract: A high power laser-thyristor structure providing low current-related and optical losses is developed. The possibility of controlling the lasing turn-on delay time of the laser thyristor in the 8–2600 ns range is demonstrated. The minimum values of the energy and amplitude of the control current-density pulse, required for turning-on the laser thyristor with a peak output power of 28 W, are 1.4 nJ and 0.6 A/cm$^2$, respectively.

Received: 21.10.2013
Accepted: 01.11.2013


 English version:
Semiconductors, 2014, 48:5, 697–699

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