V. A. Makara, L. P. Steblenko, O. A. Korotchenkov, A. B. Nadtochii, D. V. Kalinichenko, A. N. Kurilyuk, Yu. L. Kobzar', A. N. Krit, S. N. Naumenko, “Change in the charge and defect-impurity state of silicon for solar-power engineering under the effect of a magnetic field”, Fizika i Tekhnika Poluprovodnikov, 2014, Volume 48, Issue 6,Pages <nobr>742

This article is cited in 2 papers

Surface, interfaces, thin films

Change in the charge and defect-impurity state of silicon for solar-power engineering under the effect of a magnetic field

V. A. Makara^a, L. P. Steblenko^a, O. A. Korotchenkov^a, A. B. Nadtochii^a, D. V. Kalinichenko^a, A. N. Kurilyuk^a, Yu. L. Kobzar'^a, A. N. Krit^b, S. N. Naumenko^a

^a National Taras Shevchenko University of Kyiv, Faculty of Physics
^b Scientific Investigation Center "Physicochemical materials", Taras Shevchenko Kyiv National University, and the National Academy of Sciences of Ukraine, Kyiv, 01601, Ukraine

Abstract: The effect of a weak permanent magnetic field on the structure and charge state of silicon for solar-power engineering is investigated. It is revealed that magnetostimulated changes in the defect-impurity state and surface potential have a reversible character.

Received: 04.07.2013
Accepted: 23.09.2013