RUS  ENG
Full version
JOURNALS // Fizika i Tekhnika Poluprovodnikov // Archive

Fizika i Tekhnika Poluprovodnikov, 2014 Volume 48, Issue 6, Pages 747–752 (Mi phts7607)

This article is cited in 3 papers

Surface, interfaces, thin films

Specific features of the low-temperature conductivity and photoconductivity of CuInSe$_2$–ZnIn$_2$Se$_4$ alloys

V. V. Bozhkoa, A. V. Novosada, O. V. Parasyuka, N. Vainoriusb, A. Sakavichusb, V. Janonisb, V. Kazhukauskasb, A. V. Chichurinb

a Lesya Ukrainka East European National University
b Vilnius University, Vilnius

Abstract: n-type CuInSe$_2$–ZnIn$_2$Se$_4$ alloy single crystals are grown by the horizontal variant of the Bridgman method. The slight temperature dependence of the conductivity, high electron concentration, and the low photoconductivity of single crystals containing a low (5–10 mol%) fraction of ZnIn$_2$Se$_4$ are indicative of the nearly degenerate state of the crystals. It is established that, in the CuInSe$_2$–ZnIn$_2$Se$_4$ single crystals containing 15 and 20 mol% of ZnIn$_2$Se$_4$, the hopping mechanism of conductivity is dominant at temperatures of $T\sim$ 27–110 K. At $T\ge$ 110 K, hopping conductivity gives way to activated conductivity. It is found that the specific feature of the low-temperature (27–77 K) photoconductivity spectrum of single crystals with $\sim$ 15 and 20 mol% of ZnIn$_2$Se$_4$ is a single narrow peak at a wavelength of $\lambda_{\mathrm{max}}$ = 1190–1160 nm.

Received: 24.09.2013
Accepted: 21.10.2013


 English version:
Semiconductors, 2014, 48:6, 727–732

Bibliographic databases:


© Steklov Math. Inst. of RAS, 2025