Properties of TiO$_2$ films on silicon substrate

Influence of the substrate material and the effect of oxygen plasma on the microprofile and electrical properties of TiO$_2$ films deposited by radio-frequency magnetron sputtering are studied. It is shown that the most continuous films with the smallest roughness are obtained when deposited onto silicon substrates. The change in the capacitance-voltage and conductance-voltage characteristics of the structures upon their exposure to oxygen plasma is accounted for by the diffusion of oxygen atoms across the titanium-dioxide film and by the appearance of a SiO$_2$ layer at the Si–TiO$_2$ interface.