Magnetic field characterization of physical properties of two-dimensional electron gas of nitride high electron mobility transistor heterostructures

Analysis of the magnetic field dependence of magnetoresistance and Shubnikov–de Haas oscillations allows us to determine the concentration of charge carriers, as well as temperature and electron density dependencies of the transport and quantum mobility of the two-dimensional electron gas in AlGaN/AlN/GaN high-electron-mobility transistor heterostructures. Unlike the standard Hall method, which requires 4-contact measurements and additional technological procedures for creating test modules, the proposed technique uses 2 contacts and allows to compare the two-dimensional electron gas parameters in finished high-electron- mobility transistors and in the initially synthesized heterostructures.