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JOURNALS // Fizika i Tekhnika Poluprovodnikov // Archive

Fizika i Tekhnika Poluprovodnikov, 2014 Volume 48, Issue 6, Pages 805–813 (Mi phts7628)

This article is cited in 1 paper

Semiconductor structures, low-dimensional systems, quantum phenomena

On the size distribution in three-dimensional quantum-dot crystals

R. D. Vengrenovich, B. V. Ivanskii, M. O. Stasyk, I. I. Pan'ko

Chernivtsi National University named after Yuriy Fedkovych

Abstract: The size distribution function of nanodots in artificial three-dimensional (Si)Ge/Si and In(Ga)As/GaAs quantum dot crystals grown using templates with perfect periodicity is calculated. Pyramidal nanodots were modeled by cone-shaped clusters for which the Thomson formula was derived, which is necessary to determine the growth (dissolution) rate of clusters during Ostwald ripening. A comparison of the calculated curve with experimental histograms shows that the size distribution itself is formed during Ostwald ripening and is caused by features of Ge and InAs quantum-dot formation on preliminarily textured Si and GaAs substrates.

Received: 18.09.2013
Accepted: 30.09.2013


 English version:
Semiconductors, 2014, 48:6, 783–791

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