Electrical properties of a SiC–Si multilayer structure

The charge properties of a multilayer structure, composed of silicon-carbide polytypes on a silicon substrate, are investigated. Knowledge of the properties of the space-charge region of silicon and the possibility of affecting the surface of a structure by the field effect [1] provides data on the charge processes at the interfaces between the polytypes. These data are urgent for improving the methods of synthesizing electronic structures based on SiC polytypes.