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Fizika i Tekhnika Poluprovodnikov, 2014 Volume 48, Issue 8, Pages 1037–1043 (Mi phts7665)

This article is cited in 1 paper

Electronic properties of semiconductors

DFT modeling of Mn charged states in Ga$_{1-x}$Mn$_x$As diluted ferromagnetic semiconductors: The cluster approach

I. V. Krauklis, O. Yu. Podkopaeva, Yu. V. Chizhov

St. Petersburg State University, Faculty of Physics

Abstract: Quantum chemical cluster modeling of the high-symmetry nanoclusters Ga$_{15}$MnAs$_{16}$H$_{36}$ and Ga$_{12}$MnAs$_{16}$H$_{36}$ simulating the bulk of a GaAs crystal with Mn paramagnetic impurity center is carried out within the Density Functional Theory. A Generalized Gradient Approximation method PBEPBE/LanL2DZ is used to study the neutral Mn$^0$ and ionized Mn$^-$ states of a Mn atom in the nanoclusters under consideration. The change of the charge state of the impurity center from Mn$^0$ to Mn$^-$ leads to a considerable relaxation of Mn–As bonds in the immediate surroundings of the Mn atom and to the "$p$-hole" recombination. It also affects the spin density localization. The components of the $g$-tensor for both the neutral Mn$^0$ and the ionized Mnstates are calculated by the Gauge-Independent Atomic Orbital (GIAO) method with the hybrid density-functional mPW1PW91. The resulting values of the $g$-factor are in good agreement with the experimental Electron Paramagnetic Resonance data. The results obtained confirm the applicability of the cluster approach for describing charge effects in dilute ferromagnetic semiconductors.

Received: 27.11.2013
Accepted: 27.12.2013


 English version:
Semiconductors, 2014, 48:8, 1010–1016

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