Characterization of porous silicon carbide according to absorption and photoluminescence spectra

The results of the atomic-force microscopy, optical-absorption spectroscopy, and photoluminescence spectroscopy of porous silicon carbide (por-SiC) produced by anodic etching are reported. Analysis of the data shows that the cubic SiC phase is lacking in the porous layer and the photoluminescence signal from por-SiC at the excitation photon energy $h\nu_{\mathrm{ex}}\le E_g$ appears due to the formation of radiative centers associated with impurity atoms and surface defects produced upon anodic etching of the sample and subsequent treatment to uncover the pores.