Variations in the electrical properties of silicon MOS structures with a nanodimensional silicon oxide under the effect of water vapors

The dependences of surface potential and the density of surface states of silicon MOS structures with nanoscale silicon oxide on the humidity of the surrounding gaseous medium were investigated. Based on the model of moisture sensitivity of such structures being in depletion modes and weak inversion, an analytical dependence of the surface potential on the humidity was received and the criteria of its linearity were determined. The validity of the analytical dependence was confirmed experimentally.