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Fizika i Tekhnika Poluprovodnikov, 2014 Volume 48, Issue 9, Pages 1169–1170 (Mi phts7684)

This article is cited in 1 paper

Electronic properties of semiconductors

Temperature and magnetic-field dependences of the thermoelectric power of electronic indium antimonide

M. M. Gadzhialiev, Z. Sh. Pirmagomedov, T. N. Efendieva

Daghestan Institute of Physics after Amirkhanov

Abstract: The thermoelectric power of electronic indium antimonide with $n$ = 2 $\times$ 10$^{14}$ cm$^{-3}$ in a transverse magnetic field as high as 7 kOe is studied in the temperature range from 4.8 to 120 K. The thermoelectric power is found to be independent of field at a temperature close to 56 K.

Received: 28.11.2013
Accepted: 20.01.2014


 English version:
Semiconductors, 2014, 48:9, 1139–1140

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