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Fizika i Tekhnika Poluprovodnikov, 2014 Volume 48, Issue 9, Pages 1176–1181 (Mi phts7686)

This article is cited in 6 papers

Electronic properties of semiconductors

Structural and optical properties of ZnO films produced by a nonvacuum chemical technique

V. V. Strel'chuka, E. A. Avramenkoa, A. S. Romaniuka, L. V. Zaviyalovaa, G. S. Svechnikova, V. S. Khomchenkoa, N. N. Roshchinaa, V. N. Tkachb

a Institute of Semiconductor Physics NAS, Kiev
b V. Bakul Institute for Superhard Materials of the National Academy of Sciences of Ukraine, Kiev

Abstract: Zinc-oxide films are grown by a new nonvacuum chemical method: the pyrolysis of zinc acetylacetonate at a temperature of 280–300°C. The structural, phonon, and emission properties of the ZnO films are studied by X-ray diffraction analysis, scanning electron microscopy, Raman measurements, and photoluminescence spectroscopy. The high-intensity (0002) peak recorded in the X-ray diffraction spectra indicate the predominant orientation of crystallites in the (0001) direction in the ZnO films. From analysis of the $E_2^{\mathrm{high}}$ mode in the Raman spectrum of the ZnO films, the elastic strains $\varepsilon_{zz}$ ($\sim$ 3.2 $\times$ 10$^{-3}$) and the quality of the crystal structure are determined. The characteristics of the pyrolytic ZnO films are compared with the corresponding characteristics of ZnO films grown by molecular-beam epitaxy. As a result, the possibility of growing polycrystalline ZnO films of rather high quality by a practically feasible low-temperature technique is demonstrated.

Received: 01.10.2013
Accepted: 20.01.2014


 English version:
Semiconductors, 2014, 48:9, 1145–1150

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