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Fizika i Tekhnika Poluprovodnikov, 2014 Volume 48, Issue 9, Pages 1209–1216 (Mi phts7693)

This article is cited in 3 papers

Semiconductor structures, low-dimensional systems, quantum phenomena

Effect of nanobridges on the emission spectra of a quantum dot-quantum well tunneling pair

V. G. Talalaevabcd, G. È. Cirlinefghd, L. I. Gorayhe, B. V. Novikovd, M. È. Labzovskayad, J. W. Tommc, P. Wernera, B. Fuhrmannb, J. Schillingb, P. N. Raceci

a Max Planck Institute of Microstructure Physics, 06120 Halle (Saale), Germany
b Martin Luther University Halle-Wittenberg, ZIK SiLi-nano, 06120 Halle, Germany
c Max Born Institute for Nonlinear Optics and Short Pulse Spectroscopy, 12489 Berlin, Germany
d V. A. Fock Institute of Physics, Saint-Petersburg State University
e Alferov Federal State Budgetary Institution of Higher Education and Science Saint Petersburg National Research Academic University of the Russian Academy of Sciences, St. Petersburg
f Saint Petersburg State Polytechnic University, St. Petersburg, 195251, Russia
g Ioffe Institute, St. Petersburg
h Institute for Analytical Instrumentation, Russian Academy of Sciences, St. Petersburg
i Weierstrass Institute for Applied Analysis and Stochastics, 10117 Berlin, Germany

Abstract: Emission in the narrow spectral range 950–1000 nm is obtained at the nanobridge optical transition involving experimentally and theoretically observed hybrid states in the InGaAs system, i.e., quantum dot-nanobridge-quantum well. It is experimentally shown that the oscillator strength of the new transition sharply increases in the built-in electric field of a pin junction. In the mode of weak currents in the system under study, the nanobridge transition is the dominant electroluminescence channel. At current densities $>$ 10 A cm$^2$, nanobridge “burning” is observed, after which the system becomes a “quasi-classical” quantum dot-quantum well tunneling pair separated by a barrier.

Received: 25.12.2013
Accepted: 24.01.2014


 English version:
Semiconductors, 2014, 48:9, 1178–1184

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