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Fizika i Tekhnika Poluprovodnikov, 2014 Volume 48, Issue 9, Pages 1217–1227 (Mi phts7694)

This article is cited in 4 papers

Semiconductor structures, low-dimensional systems, quantum phenomena

Optical properties of heterostructures with deep AlSb/InAs$_{0.84}$Sb$_{0.16}$/AlSb quantum wells

N. V. Pavlov, G. G. Zegrya

Ioffe Institute, St. Petersburg

Abstract: Using the Kane model, the energy of the dimensional quantization levels, absorption coefficient, and radiative-recombination rate are calculated for interband optical transitions between different dimensional quantization subbands in a heterostructure with a deep AlSb/InAs$_{0.86}$Sb$_{0.14}$/AlSb quantum well with regard to and without regard for the spin-orbit interaction. It is shown that the corrections introduced by the spin-orbit interaction in calculating these quantities are no larger than a few tens of percent even at spin-orbit interaction constants exceeding the band gap and account for the nonparabolicity in the calculation of the energy of dimensional quantization levels and absorption coefficient is much more important than account for the spin-orbit interaction. In calculation of the radiative-recombination rate, both these effects should be taken into account.

Received: 27.12.2013
Accepted: 23.01.2014


 English version:
Semiconductors, 2014, 48:9, 1185–1195

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