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Fizika i Tekhnika Poluprovodnikov, 2014 Volume 48, Issue 9, Pages 1237–1242 (Mi phts7697)

This article is cited in 3 papers

Micro- and nanocrystalline, porous, composite semiconductors

Tunneling transport through passivated CdS nanocrystal arrays grown by the Langmuir–Blodgett method

K. A. Svita, D. Yu. Protasova, L. L. Sveshnikovaa, A. K. Shestakova, S. A. Teysa, K. S. Zhuravlevb

a Rzhanov Institute of Semiconductor Physics, Siberian Branch of Russian Academy of Sciences, Novosibirsk
b Novosibirsk State University

Abstract: Tunneling electron transport through CdS nanocrystal arrays fabricated by the Langmuir–Blodgett method are studied by scanning electron spectroscopy. The effect of the matrix-annealing atmosphere on tunneling transport through the nanocrystal arrays is studied. Electron capture at traps in the case of nanocrystals annealed in vacuum is detected by tunneling current-voltage characteristics analyzed using a model relating the data of tunneling spectroscopy, photoluminescence, and quantum-mechanical calculation. Analysis shows that the nanocrystal surface is passivated by an ammonia monolayer upon annealing in an ammonia atmosphere. It is found that the substrate and surrounding non-passivated nanocrystals have an effect on the electron polarization energy.

Received: 19.11.2013
Accepted: 03.12.2013


 English version:
Semiconductors, 2014, 48:9, 1205–1210

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