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Fizika i Tekhnika Poluprovodnikov, 2014 Volume 48, Issue 9, Pages 1243–1248 (Mi phts7698)

This article is cited in 13 papers

Micro- and nanocrystalline, porous, composite semiconductors

Surface of porous silicon under hydrophilization and hydrolytic degradation

V. P. Ulina, N. V. Ulina, F. Yu. Soldatenkova, A. V. Semenovbc, A. V. Bobyl'a

a Ioffe Institute, St. Petersburg
b Saint Petersburg Electrotechnical University "LETI"
c R&D Center TFTE, St.-Petersburg

Abstract: Analysis of the IR absorption spectra is used to trace changes in the chemical composition of surface layers of mesoporous silicon crystals during the course of their hydrophilization via oxidation in hydrogen-peroxide solutions and as a result of indirect, by intermediate bromination, and direct nucleophilic substitution of bound hydrogen with a hydroxyl. The spontaneous process of atomic rearrangement with the transfer of oxygen atoms from adsorbed OH groups to lower-lying atomic layers of the crystalline skeleton, which yields Si–H bonds on its surface: –Si–Si–OH $\to$ –Si–O–Si–H, is revealed. The sequence of elementary processes that facilitate the hydrolytic degradation of porous silicon in weakly alkaline media is considered. The role played by the deformation of chemical bonds in a porous crystal in promoting the hydrolysis of silicon is noted. It is shown that the surface modification of porous silicon via bromination and subsequent treatment in water makes it possible to substantially increase the rate of its hydrolytic degradation in weakly alkaline solutions that are similar in pH values to biological fluids.

Received: 24.01.2014
Accepted: 19.02.2014


 English version:
Semiconductors, 2014, 48:9, 1211–1216

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