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Fizika i Tekhnika Poluprovodnikov, 2014 Volume 48, Issue 10, Pages 1344–1347 (Mi phts7717)

This article is cited in 3 papers

Semiconductor structures, low-dimensional systems, quantum phenomena

Mechanism of current flow in a Au–Ti–Al–Ti–n$^+$-GaN ohmic contact in the temperature range of 4.2–300 K

A. V. Sachenkoa, A. E. Belyaeva, N. S. Boltovetsb, R. V. Konakovaa, L. M. Kapitanchukc, V. N. Sheremeta, Yu. N. Sveshnikovd, A. S. Pilipchuke

a Institute of Semiconductor Physics NAS, Kiev
b State Enterprise Research Institute "Orion", Kyiv, 03057, Ukraine
c E. O. Paton Electric Welding Institute, National Academy of Sciences of Ukraine
d JSC Elma-Malachit, Moscow, Zelenograd
e Institute of Physics, National Academy of Sciences of Ukraine, Kiev

Abstract: The temperature dependence of the contact resistivity $\rho_c(T)$ of Au–Ti–Al–Ti–n$^+$-GaN ohmic contacts is studied experimentally and substantiated theoretically in the temperature range $T$ = 4.2–300 K. It is shown that the saturation portion of $\rho_c(T)$ is observed in the low-temperature measurement region (4.2–50 K). As the temperature increases, $\rho_c$ decreases by the exponential law. The experimental and calculated dependences $\rho_c(T)$ are in agreement. The obtained results make it possible to conclude the field nature of the current transfer for the saturation region of $\rho_c(T)$ and the thermal-field one, for the exponential region.

Received: 21.10.2013
Accepted: 28.11.2013


 English version:
Semiconductors, 2014, 48:10, 1308–1311

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