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JOURNALS // Fizika i Tekhnika Poluprovodnikov // Archive

Fizika i Tekhnika Poluprovodnikov, 2014 Volume 48, Issue 10, Pages 1370–1376 (Mi phts7721)

This article is cited in 1 paper

Semiconductor structures, low-dimensional systems, quantum phenomena

Charge transport in Si-SiO$_2$ and Si-TiO$_2$ nanocomposite structures

Yu. S. Milovanov, G. V. Kuznetsov, V. A. Skryshevsky, S. M. Stupan

National Taras Shevchenko University of Kyiv

Abstract: The experimental data on dispersed Si-SiO$_2$ and Si-TiO$_2$ nanocomposite structures different in terms of physical, chemical, and insulator properties of oxide components are reported. The parameters of the nanocomposite structures are studied by FTIR spectroscopy and impedance spectroscopy. It is shown that, in such structures, the mechanisms of charge-carrier transport are defined by the properties of Si nanocrystallites and the corresponding oxide as well as by interaction processes at interfaces between grains.

Received: 17.12.2013
Accepted: 11.03.2014


 English version:
Semiconductors, 2014, 48:10, 1335–1341

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