P. N. Brunkov, N. D. Il'inskaya, S. A. Karandashov, N. M. Latnikova, A. A. Lavrov, B. A. Matveev, A. S. Petrov, M. A. Remennyi, E. N. Sevostyanov, N. M. Stus, “$P$-InAsSbP/$n^0$-InAs/$n^+$-InAs photodiodes for operation at moderate cooling (150–220 K)”, Fizika i Tekhnika Poluprovodnikov, 2014, Volume 48, Issue 10,Pages 1394

This article is cited in 7 papers

Semiconductor physics

$P$-InAsSbP/$n^0$-InAs/$n^+$-InAs photodiodes for operation at moderate cooling (150–220 K)

P. N. Brunkov^ab, N. D. Il'inskaya^a, S. A. Karandashov^a, N. M. Latnikova^c, A. A. Lavrov^a, B. A. Matveev^a, A. S. Petrov^d, M. A. Remennyi^a, E. N. Sevostyanov^c, N. M. Stus^a

^a Ioffe Institute, 194021 St. Petersburg, Russia
^b National Research University of Information Technologies, Mechanics and Optics (ITMO), 197101 St. Petersburg, Russia
^c LETI Ul’yanov (Lenin) St. Petersburg Electrotechnical University, 197376 St. Petersburg, Russia
^d Electron National Research Institute, 194223 St. Petersburg, Russia

Abstract: InAs single heterostructure photodiodes were considered as alternatives to cooled CdHgTe-based detectors sensitive to radiation around 3 $\mu$m spectral region in a wide temperature range 77–300 K. Estimations of detectivity as well as $p$–$n$ junction position in InAs heterostructures have been obtained via photoelectrical and AFM measurements.

Received: 14.01.2014
Accepted: 24.01.2014

Language: English