Methods for estimating the compensating-impurity concentration in Hg-doped Ge

Methods for estimating the compensating-impurity concentration from the segment of curves corresponding to temperatures $T >$ 50 K are suggested based on analysis of the results of measurements of the Hall constant and mobility in a broad temperature range for Hg-doped Ge samples. It is concluded that local Hg inclusions in the sample matrix are ionized in this temperature range and both methods are applicable irrespective of the chemical nature of the impurity.