A. M. Nadtochiy, A. S. Payusov, M. V. Maksimov, A. E. Zhukov, O. I. Simchuk, “Multilayer quantum-dot arrays of high bulk density”, Fizika i Tekhnika Poluprovodnikov, 2014, Volume 48, Issue 11,Pages <nobr>1487

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Semiconductor structures, low-dimensional systems, quantum phenomena

Multilayer quantum-dot arrays of high bulk density

A. M. Nadtochiy^abc, A. S. Payusov^ab, M. V. Maksimov^abc, A. E. Zhukov^abc, O. I. Simchuk^ab

^a Ioffe Institute, St. Petersburg
^b St. Petersburg Academic University — Nanotechnology Research and Education Centre of the Russian Academy of Sciences (the Academic University)
^c "Solar Dots" Ltd., St. Petersburg, 194021, Russia

Abstract: The possibility of the formation of multilayer (30 layers) InAs/GaAs quantum-dot arrays with high structural and optical quality is demonstrated at small spacer-layer thicknesses (30–15 nm). In the case of decreasing the spacer-layer thickness to 15 nm, significant radiation polarization is observed, which points to the electron coupling of individual quantum dots due to tunneling.